V-I Curves of p-ZnO:Al/n-ZnO:Al Junction Fabricated by RF Magnetron Sputtering
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چکیده
منابع مشابه
Analysis of Photoluminescence for N-doped and undoped p-type ZnO Thin Films Fabricated by RF Magnetron Sputtering Method
N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at 800 C for 5 minutes in ambient of O2 with pressure of 10 Torr. X-ray diffraction shows that the homobuffer layer is beneficial to the crystalline of N-doped ZnO thi...
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2008
ISSN: 1226-7945
DOI: 10.4313/jkem.2008.21.6.575